3 edition of Nanoscale phenomena in ferroelectric thin films found in the catalog.
Nanoscale phenomena in ferroelectric thin films
Published
2004
by Kluwer Academic Publishers in Boston
.
Written in
Edition Notes
Includes bibliographical references and index.
| Statement | edited by Seungbum Hong. |
| Contributions | Hong, Seungbum. |
| Classifications | |
|---|---|
| LC Classifications | TA418.9.T45 N35 2004 |
| The Physical Object | |
| Pagination | xiv, 288 p. : |
| Number of Pages | 288 |
| ID Numbers | |
| Open Library | OL19290664M |
| ISBN 10 | 1402076304 |
| LC Control Number | 2003061988 |
Ferroelectric Phase Transitions in Epitaxial Perovskite Films. Marina Tyunina. Microelectronics and Materials Physics Laboratories, University of Oulu, Finland. Book Editor(s): Miguel Algueró. Search for more papers by this author Author: Marina Tyunina. Voelte-Keegan Nanoscience Research Center N 16th Street, N NANO Lincoln, NE ncmn@ NebraskaNCMN @unl_ncmn.
It has been demonstrated that MOCVD has the capability to grown metals and oxides with high crystalline quality. The MOCVD growth of a simple perovskite, namely ferroelectric lead titanate (PbTiO{sub 3}), has resulted in three-dimensionally epitaxial thin films on the () surfaces of KTaO{sub 3}, MgO, and SrTiO{sub 3} substrates. @article{osti_, title = {Nanomechanics of Ferroelectric Thin Films and Heterostructures}, author = {Li, Yulan and Hu, Shenyang Y. and Chen, L. Q.}, abstractNote = {The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability.
The need for ferroelectric systems with particular applications led to detailed research along with the betterment of processing and characterization techniques. This book provides an updated outlook of current research into ferroelectricity, covering several formulations, their forms (bulk, thin films, and ferroelectric liquid crystals), and. Journal Publications J. Casamento, M J-Y. Juang, D.G. Schlom, and Y-H. Chu, “Epitaxial Integration of a Nanoscale BiFeO 3 Phase Boundary with Silicon,” Nanoscale 8 () – J.R D.A. Walko, H. Wen, and Q. Zhang, “Giant Optical Enhancement of Strain Gradient in Ferroelectric BiFeO 3 Thin Films and its Physical.
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This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials.
Well. This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials.
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale Author: Seungbum Hong. This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films.
It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials.5/5(1).
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin.
Nagarajan V., Zhao T., Zheng H., Ramesh R. () Nanoscale Phenomena in Ferroelectric Thin Films. In: Thin Films and Heterostructures for Oxide Electronics. Multifunctional Thin Film by: 1. Nanoscale Phenomena in Ferroelectric Thin Films presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films.
It consists of two main parts: electrical characterization in nanoscale ferroelectric capacitor, and nano domain. This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e.
electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany.
Taking full advantage of the synergies between nanoscale ferroelectrics and multiferroics, the text covers materials nanostructured at all levels, from ceramic technologies like ferroelectric nanopowders, bulk nanostructured ceramics and thick films, and magnetoelectric nanocomposites, to thin films, either polycrystalline layer.
Ferroelectric thin films of perovskite structures were first deposited by the thermal evaporation of BT in the s after the discovery of the BT single crystal. 1 In the s, the sputtering process was applied for the deposition of the perovskite materials.
The PT thin films were deposited by sputtering. 2 However, their structure and ferroelectric property was not well characterized. Taking full advantage of the synergies between nanoscale ferroelectrics and multiferroics, the text covers materials nanostructured at all levels, from ceramic technologies like ferroelectric nanopowders, bulk nanostructured ceramics and thick films, and magnetoelectric nanocomposites, to thin films, either polycrystalline layer.
This book reviews the key issues in processing and characterization of nanoscale ferroelectrics and multiferroics, and provides a comprehensive description of their properties, with an emphasis in differentiating size effects of extrinsic ones like boundary or interface effects.
Recently described nanoscale novel phenomena are also addressed. Important potential applications are possible nanosize ferroelectric films in non-volatile memories, microelectronics, sensors, pyroelectric and electro-optic devices. This new area of research of ferroelectricity is still in impetuous development and far from.
Nanoscale Imaging of Domain Dynamics and Retention in Ferroelectric Thin Films Article (PDF Available) in Applied Physics Letters 71(24) December with 41 Reads How we measure 'reads'. Taking full advantage of the synergies between nanoscale ferroelectrics and multiferroics, the text covers materials nanostructured at all levels, from ceramic technologies like ferroelectric nanopowders, bulk nanostructured ceramics and thick films, and magnetoelectric nanocomposites, to thin films, either polycrystalline layer Price: $ However, research in ferroelectric and piezoelectric thin films is limited due to the intrinsic difficulties of structural engineering at the nanoscale.
To this end, nanostructured films exhibit uniquely different properties from nontextured homogenous thin films due to the deliberate engineering of nanoscale features into the structure. PFM has allowed mapping of nanoscale domain structures in FEs, primarily thin films, detection of the ultimate size limit for FE domains, delineation of Cited by: This book contains twenty two chapters and offers an up-to-date view of recent research into ferroelectricity.
The chapters cover various formulations, their forms (bulk, thin films, ferroelectric liquid crystals), fabrication, properties, theoretical topics and ferroelectricity at nanoscale.
Read more > Cited by: Novel physical functionality enabled by nanoscale control of materials has been the target of intense scientific exploration and interest for the last two decades, leading directly to the explosive growth of nanoscience and nanotechnology.
However, this transition to nanometer scales also blurs the boundary between classical physical and electrochemical phenomena, due to smaller transport Cited by: UNSW Sydney NSW Australia Telephone +61 2 Authorised by Deputy Vice-Chancellor (Research) UNSW CRICOS Provider Code: G ABN: 57.
The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters.The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of interest in ferroelectric memory devices.
Although both experimental and theoretical studies on this new ferroelectric system have been undertaken, much remains to be unveiled regarding its domain landscape and switching kinetics. Here we demonstrate that the switching of single domains can be Cited by: The leakage current densities of pure and % Pr-PMN-PT thin films were on the order of × 10 −4 A/cm 2 and × 10 −5 A/cm 2, respectively, at kV/cm.
A high pyroelectric coefficient (p y) with a value of μC/m 2 K was obtained in % Pr-PMN-PT thin films on Si substrate, which makes this material suitable for application.
